Product Summary

The UPA1501H is an N-channel power MOS FET array.

Parametrics

UPA1501H absolute maximum ratings : (1)Drain to Source Voltage : 120 V; (2)Gate to Source Voltage : +20, -10 V; (3)Drain Current (DC) : ±3.0 A/unit; (4)Drain Current (pulse) : ±12 A/unit; (5)Repetitive Peak Reverse Voltage : 140 V; (6)Diode Forward Current : 3.0 A/unit; (7)Total Power Dissipation (4 circuits) : 4.0 W; (8)Channel Temperature : 150℃; (9)Storage Temperature : -55 to +150℃.

Features

UPA1501H features: (1)4 V driving is possible; (2)Low On-state Resistance RDS(on) ≤0.42Ω MAX. (VGS = 10 V, ID = 2 A); (3)RDS(on)≤0.49Ω MAX. (VGS = 4 V, ID = 2 A); (4)Surge Absorber, built in.

Diagrams

UPA1501H dimension