(China (Mainland))
Product Summary
The FDS4559 is a 60V complementary powertrench MOSFET. The FDS4559 is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Parametrics
FDS4559 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 60V(Q1), –60V(Q2); (2)Gate-Source Voltage, VGSS: ±20V; (3)ID Drain Current - Continuous: 4.5A(Q1), –3.5A(Q2); (4)ID Drain Current - Pulsed: 20A(Q1), –20A(Q2); (5)Power Dissipation for Dual Operation, PD: 2W; (6)Power Dissipation for Single Operation, PD: 1.6W; (7)Operating and Storage Junction Temperature Range, TJ, TSTG: -55 to +175℃.
Features
FDS4559 features: (1)Q1: N-Channel, 4.5A, 60V RDS(on)=55mΩ at VGS=10V; (2)RDS(on)=75mΩ at VGS=4.5V; (3)Q2: P-Channel; (4)–3.5A, –60V RDS(on)=105mΩ at VGS=–10V; (5)RDS(on)=135mΩ at VGS=–4.5V.
Diagrams
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 FDS4559 |
Fairchild Semiconductor |
MOSFET 60V/-60V N/P |
Data Sheet |
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FDS4559_F085 |
Fairchild Semiconductor |
MOSFET 60V Complementary PowerTrench MOS |
Data Sheet |
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